symbol v ds v gs i dm t j , t stg symbol typ max 64 83 89 120 r q jl 53 70 junction and storage temperature range a p d c 1.5 0.96 -55 to 150 t a =70c i d 7.5 6 30 pulsed drain current b power dissipation a t a =25c continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v 12 gate-source voltage drain-source voltage 20 c/w maximum junction-to-ambient a steady-state c/w w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja AO8814 features v ds (v) = 20v i d = 7.5 a (v gs = 10v) r ds(on) < 16m w (v gs = 10v) r ds(on) < 18m w (v gs = 4.5v) r ds(on) < 20m w (v gs = 3.6v) r ds(on) < 24m w (v gs = 2.5v) r ds(on) < 34m w (v gs = 1.8v) esd rating: 2500v hbm g1 s1 s1 d1/d2 g2 s2 s2 d1/d2 1 2 3 4 8 7 6 5 tssop-8 top view g1 d1 s1 g2 d2 s2 the AO8814 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v while retaining a 12v v gs(max) rating. it is esd protected. this device is suitable for use as a uni-directiona l or bi-directional load switch, facilitated by its comm on- drain configuration. common-drain dual n-channel enhancement mode field effect transistor general description www.freescale.net.cn 1 / 4
symbol min typ max units bv dss 20 v 1 t j =55c 5 i gss 10 m a bv gso 12 v v gs(th) 0.5 0.71 1 v i d(on) 30 a 10 13 16 t j =125c 14 18 22 11.5 15 18 m w 13 16.8 20 m w 15 19 24 m w 20 26 34 m w g fs 30 s v sd 0.74 1 v i s 2.5 a c iss 1390 pf c oss 190 pf c rss 150 pf r g 1.5 w q g 15.4 nc q gs 1.4 nc q gd 4 nc t d(on) 6.2 ns t r 11 ns t d(off) 40.5 ns t f 10 ns t rr 15 ns q rr 5.1 nc maximum body-diode continuous current input capacitance output capacitance gate-source breakdown voltage v ds =0v, i g =250ua v gs =3.6v, i d =6a turn-on delaytime dynamic parameters v gs =0v, v ds =10v, f=1mhz gate drain charge turn-on rise time turn-off delaytime v gs =5v, v ds =10v, r l =1.3 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time switching parameters total gate charge v gs =4.5v, v ds =10v, i d =7.5a gate source charge m w v gs =2.5v, i d =6a i s =1a,v gs =0v v ds =5v, i d =7.5a v gs =1.8v, i d =5a v gs =4.5v, i d =7a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss m a gate threshold voltage v ds =v gs i d =250 m a v ds =16v, v gs =0v zero gate voltage drain current v ds =0v, v gs =10v gate-body leakage current static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =7.5a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =4.5v, v ds =5v v gs =10v, i d =7.5a reverse transfer capacitance i f =7.5a, di/dt=100a/ m s a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6,12, 14 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. rev 5: feb 2010 AO8814 common-drain dual n-channel enhancement mode field effect transistor www.freescale.net.cn 2 / 4
typical electrical and thermal characteristics 0 10 20 30 0 1 2 3 4 5 v ds (volts) figure 1: on-regions characteristi cs i d (a) v gs =1.5v v gs =2v 3v 4v 10v 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5 v gs (volts) figure 2: transfer characteristics i d (a) 25c 125c v ds =5v 0 10 20 30 40 50 0 5 10 15 20 i d( a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) v gs =4.5v v gs =2.5v v gs =1.8v v gs =10v v gs =3.6v 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalize on-resistance v gs =4.5v v gs =2.5v v gs =1.8v i d =7a i d =6a i d =5a v gs =10v i d =7.5a 10 20 30 40 50 60 0 2 4 6 8 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) 25c 125c i d =7.5a 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c www.freescale.net.cn 3 / 4
typical electrical and thermal characteristics 0 1 2 3 4 5 0 5 10 15 20 qg (nc) figure 7: gate-charge characteristics v gs (volt s) v ds =10v i d =7.5a 0 400 800 1200 1600 2000 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf ) c iss c rss c oss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) t j(max) =150c t a =25c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q q q q ja normalized transient thermal resistance t on t p d d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =83c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c 10 m s www.freescale.net.cn 4 / 4
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